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سالهفتهIDTitleApplNoIPCApplicantSubgroupزیر گروهرشته شرحDescription
202601WO/2026/000630MEMORY AND ACCESS METHOD THEREFOR, AND ELECTRONIC DEVICECN2024/118070G11C 5/02BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGYPHYSICSفیزیکابزارها
202601WO/2026/000740DELAY MEASUREMENT CIRCUIT AND MEMORYCN2024/127590G11C 29/50CXMT CORPORATIONPHYSICSفیزیکابزارها
202601WO/2026/001065MEMORY CHIP CONTROL METHOD, MEMORY CONTROLLER AND MEMORY SYSTEMCN2025/080567G11C 16/26HUAWEI TECHNOLOGIES CO., LTD.PHYSICSفیزیکابزارها
202601WO/2026/001251THREE-DIMENSIONAL MEMORY PROGRAMMING METHODCN2025/090607G11C 16/12CHENGDU PBM TECHNOLOGY LTD.PHYSICSفیزیکابزارها
202601WO/2026/002523HOLOGRAPHIC STORAGE HARDWARE ENABLED LOCKINGEP2025/065020G11C 13/04INTERNATIONAL BUSINESS MACHINES CORPORATIONPHYSICSفیزیکابزارها
202601WO/2026/003318MULTIPORT MEMORY SYSTEM WITH BUILT-IN CONTENTION MANAGEMENTEP2025/068348G11C 8/08XENERGIC ABPHYSICSفیزیکابزارها
202601WO/2026/005819NON-VOLATILE MEMORY WITH USAGE DEPENDENT SUSPEND RESUMEUS2025/011196G11C 16/10SANDISK TECHNOLOGIES, INC.PHYSICSفیزیکابزارها
202601WO/2026/005820BIPOLAR DECODERS FOR NONVOLATILE MEMORYUS2025/011301G11C 13/00SANDISK TECHNOLOGIES, INC.PHYSICSفیزیکابزارها
202601WO/2026/005823DIFFERENTIAL WRITE AND READ FOR SELECTOR ONLY MEMORYUS2025/011320G11C 7/22SANDISK TECHNOLOGIES, INC.PHYSICSفیزیکابزارها
202601WO/2026/005893DRAM ECC CIRCUIT ERROR DETECTION INTEGRITYUS2025/028446G11C 29/42ADVANCED MICRO DEVICES, INC.PHYSICSفیزیکابزارها
202601WO/2026/005896LINK STRESS PATTERN TO ENSURE COMMAND ADDRESS BUS INTEGRITYUS2025/028727G11C 11/408ADVANCED MICRO DEVICES, INC.PHYSICSفیزیکابزارها
202601WO/2026/005907VARIABLE ACCESS LATENCY WITH STORAGE ARRAY EXTENSIONS ON STACKED DIESUS2025/029719G11C 5/06ADVANCED MICRO DEVICES, INC.PHYSICSفیزیکابزارها
202601WO/2026/006204SHARED UNIDIRECTIONAL TIMING SIGNALSUS2025/034868G11C 7/22RAMBUS INC.PHYSICSفیزیکابزارها
202601WO/2026/006292DISTRIBUTED TEMPERATURE SENSORS IN A DIE OF A MEMORY DEVICEUS2025/035024G11C 7/04MICRON TECHNOLOGY, INC.PHYSICSفیزیکابزارها
202601WO/2026/006444CONFIGURABLE LOW VOLTAGE DETECTION THRESHOLD AT A MEMORYUS2025/035250G11C 29/02MICRON TECHNOLOGY, INC.PHYSICSفیزیکابزارها
202601WO/2026/006633ADAPTIVE PROGRAM VERIFY SCHEME WITH SENSITIVE VERIFY FOR DEFECT DETECTIONUS2025/035536G11C 16/34MICRON TECHNOLOGY, INC.PHYSICSفیزیکابزارها
202601WO/2026/006787LEVEL-BASED PROGRAMMING WITH MULTIPLE ANALOG PROGRAM VERIFY OPERATIONS BETWEEN PROGRAMMING PULSESUS2025/035773G11C 16/34MICRON TECHNOLOGY, INC.PHYSICSفیزیکابزارها